"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Structural properties of undoped and doped with Er3+ ions ZnGa2O4 nanomaterials obtained by hydrothermal method

M. VASILE1,* , C. IANASI2, A. - V. BÎRDEANU3, E. VASILE4

Affiliation

  1. National Institute for Research and Development in Electrochemistry and Condensed Matter Timisoara, 300224, Romania
  2. Institute of Chemistry Timisoara of Romanian Academy, 300223, Timisoara, Romania
  3. National R&D Institute for Welding and Material Testing - ISIM Timisoara 300222, Timisoara, Romania
  4. Metav S.A., Bucharest, Romania

Abstract

Erbium-doped nanosized ZnGa2O4 phosphors with the nominal formula of ZnGa2−xO4:xEr (x=0.05 and 0.01) were synthesized by hydrothermal method. The crystal structures were investigated by means X-ray diffraction experiments were carried out on a PANalytical X’Pert Pro diffractometer equipped with an Anton Paar HTK2000 high-temperature camera, transmission electron microscope (TEM) and BET (Brunauer Emmett Teller). An X-ray diffraction spectrum was made up to a temperature of 500°C and does not change form of crystallization. The results, from TEM measurements, indicate that the material consisting of ZnGa2−xO4:xEr particles exhibits good crystallinity with cubic spinel structure and the particle size varies with the quantity of doping. The surface area (SBET) of ZnGa2−xO4:xEr (x=0.05 and 0.01) increases compared with undoped ZnGa2O4..

Keywords

Phosphors, Erbium, Nanomaterials.

Submitted at: Oct. 5, 2011
Accepted at: Oct. 20, 2011

Citation

M. VASILE, C. IANASI, A. - V. BÎRDEANU, E. VASILE, Structural properties of undoped and doped with Er3+ ions ZnGa2O4 nanomaterials obtained by hydrothermal method, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 10, pp. 1273-1278 (2011)