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A. T. RAJAMANICKAM1,* , P. THIRUNAVUKKARASU1, K. DHANAKODI2
- Department of Electronics, SRMV College of Arts and Science, Coimbatore -641 120, Tamilnadu, India
- Department of Electronics, KSG College of Arts and Science, Coimbatore - 641 015, Tamilnadu, India
Niobium (Nb) doped TiO2 thin films were synthesized by simple chemical bath deposition method. The influence of Nb doping on structural, optical, electrical and morphology of thin films were studied by X-ray diffraction (XRD), Fourier Transform Infrared Spectra (FTIR), UV-Vis Spectra, photoluminescence (PL), four point probe mode and AFM images. Xray diffraction (XRD) results showed that both pristine and Nb (5 wt%) films formed mixture of anatase (A) and rutile (R) type phase. The surface roughness has been found to decrease with the increase of the dopant concentration as investigated by atomic force microscopy. Optical studies showed that the energy band gap of the films was lowered from 3.32 eV to 3.13 eV on Niobium (Nb) doping. PL emission intensity was decrease with Nb doped samples, which confirm the Nb doping in to TiO2 host lattice site. The electrical resistivity was found to be 0.9185 Ω.cm and 0.6125 Ω.cm for pristine and Nb doped TiO2 films for 500oC. This result confirmed that Nb doping has strong influence in the electrical properties of pure TiO2..
Transparent Conducting oxides, TiO2 thin films, Nb doping, Optical property, Resistivity.
Submitted at: Jan. 3, 2015
Accepted at: Feb. 10, 2016
A. T. RAJAMANICKAM, P. THIRUNAVUKKARASU, K. DHANAKODI, Studies on the structural, optical and electrical properties of Nb doped TiO2 nanostructured thin films, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 142-147 (2016)
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