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Study of InP(100)nitridation using AES spectroscopy and electrical analysis: Effect of annealing after nitridation.

A. TALBI1,* , M. A. BENAMARA1, M. TALBI2, Z. BENAMARA1, B. AKKAL1, B. GRUZZA3, C. ROBERT-GOUMET3, L. BIDEUX3, G. MONIER3

Affiliation

  1. Laboratoire de Microélectronique Appliquée Université Djillali LIABÈS de Sidi Bel Abbés 22000, Algérie.
  2. Faculté de Médecine. Université Djillali LIABES de Sidi Bel Abbés 22000, Algérie.
  3. LAboratoire des Sciences des Matériaux pour l’Electronique et d’Automatique, Université Blaise Pascal de Clermont II, Les Cézeaux, 63177, Aubière Cedex, France.

Abstract

Auger electron spectroscopy (AES) was used to understand the different steps of the indium phosphide nitridation and the annealing of the InN films. The AES analysis combined with electrical characterisation using the current-voltage I(V). After ionic cleaning with Ar+ ions, metallic indium crystallites are created and the nitridation of the InP substrates is performed using a plasma Glow discharge source (GDS). We used the InMNN, NKLL and PLMM Auger transitions to monitor the chemical state of the surface. We observed that after nitridation, the creation of InN and P-N bonds while the In-In metallic bonds decrease. This confirms the reaction between indium clusters and nitrogen species. After these operations, we observed the effect of annealing on the nitridated layers at 450 °C during 15 min. It appears after heating that the In-N bonds decreases and the P-N bonds increases. A theoretical model based on stacked layers allows us to confirm that two monolayers of indium nitride are created on InP (100) surface. After this operation we note a presence of an important quantity of metallic indium at the surface using Auger analysis. In fact, the (I-V) characteristics reveal a low series resistance (168Ω) for the annealed sample compared with a value of 1687Ω obtained in the not annealed ones. We believe it’s caused by the destruction of the nitride layer. The results obtained with AES spectra are coherent with electrical measurements; they suggest that the InN films are significantly affected by the temperature..

Keywords

Nitridation, AES, Indium phosphide (100), Electrical properties, Barrier height, Annealing.

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

A. TALBI, M. A. BENAMARA, M. TALBI, Z. BENAMARA, B. AKKAL, B. GRUZZA, C. ROBERT-GOUMET, L. BIDEUX, G. MONIER, Study of InP(100)nitridation using AES spectroscopy and electrical analysis: Effect of annealing after nitridation., Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 509-513 (2013)