"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Study of localization processes in transport properties of Bi:2201 epitaxial thin film

D. MARCONI1,* , I. MATEI1, S. MANOLACHE1, C. LUNG1, A. V. POP1

Affiliation

  1. Faculty of Physics, Babes-Bolyai University, 3400 Cluj-Napoca, Romania

Abstract

Epitaxial Bi:2201 thin films were deposited on SrTiO3 (100) substrate using the DC magnetron sputtering method. Optimal deposition conditions for superconducting films with smooth film surface and high epitaxial quality were obtained. The effect of partial oxygen pressure (fO2) in sputtering gas on the electrical resistivity was studied. The phase diagram for transition temperature and localization temperature function of oxygen partial pressure was obtained..

Keywords

Superconductors, Thin films, X-ray diffraction, Electronic transport.

Submitted at: Feb. 25, 2008
Accepted at: April 4, 2008

Citation

D. MARCONI, I. MATEI, S. MANOLACHE, C. LUNG, A. V. POP, Study of localization processes in transport properties of Bi:2201 epitaxial thin film, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 4, pp. 926-928 (2008)