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DEEPIKA1,* , H. SINGH1, N. S. SAXENA2
- Dept. of Applied Sciences, The NorthCap University, Sector 23 -A, Gurugram, India
- Semiconductor and Polymer Science Lab., Dept. of Physics, University of Rajasthan, Jaipur, India
Optical properties of Ge1-xSnxSe2.5 (x= 0, 0.3, 0.5) thin ﬁlms have been studied using absorption and transmission spectra in range 400-1200 nm. Thermal evaporation technique has been used to deposit films onto cleaned glass substrate. Energy band gap has been determined using the absorption spectra while transmission spectra have been used to obtain refractive index and thickness of the ﬁlms using the method proposed by Swanepoel. Other optical parameters i.e., extinction coefﬁcients, band tail width, dielectric constant has also been evaluated. The studies show that refractive index increases while the band gap decreases with increase in Sn concentration..
Chalcogenides, Glasses, Vacuum deposition, Thin films, Energy band gap.
Submitted at: June 7, 2018
Accepted at: Feb. 12, 2019
DEEPIKA, H. SINGH, N. S. SAXENA, Study of optical properties of vacuum evaporated Ge1-xSnxSe2.5 (x=0, 0.3, 0.5) thin films, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 1-2, pp. 108-113 (2019)
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