"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Study of the optical properties of the amorphous Sb2S3 thin films

F. AOUSGI1,* , M. KANZARI1

Affiliation

  1. Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs-ENIT BP 37, Le belvédère 1002-Tunis, Tunisie

Abstract

Sb2S3 thin films have been deposited by single source vacuum thermal evaporation onto glass substrates at various substrate temperatures in the range 30- 240 °C. The X-ray diffraction spectra indicated that all the as-deposited Sb2S3 films were amorphous.The optical constants were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300–1800 nm. It has been found that the refractive index dispersion data obeyed the single oscillator of the Wemple–DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated according to the model of Spitzer and Fan..

Keywords

X-ray diffraction - Amorphous semiconductors, Glasses - Vacuum deposition - Vacuum deposition.

Submitted at: Jan. 30, 2010
Accepted at: Feb. 18, 2010

Citation

F. AOUSGI, M. KANZARI, Study of the optical properties of the amorphous Sb2S3 thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 2, pp. 227-232 (2010)