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Study of trenching formation during SF6 /O2 reactive ion etching of 4H-SiC

F. SIMESCU1,* , D. COIFFARD1, M. LAZAR1, P. BROSSELARD1, D. PLANSON1

Affiliation

  1. Lab. AMPERE, UMR CNRS 5005, INSA-Lyon, Bât. L. VINCI, 69621 Villeurbanne Cedex, France

Abstract

An accurate and reproducible SF6/O2 reactive ion etching process in 4H-SIC has been defined, to realise deep and vertical trenches with a high selectivity Ti/Ni mask, and tilted sidewalls with a controlled angle by etching using a SiO2 mask. The trenching issues have been eliminated by increasing the plasma power. Smooth etched surfaces are obtained with a slightly tapered transition at the bottom of the sidewalls associated with a slight narrowing of the lower-end of the walls. Controlling the trench angle, very flat profiles are obtained for low pressure and plasma flow rates, and more vertical sidewalls by increasing these parameters..

Keywords

Reactive ion etching, Silicon carbide, Trenching.

Submitted at: June 21, 2009
Accepted at: Feb. 27, 2010

Citation

F. SIMESCU, D. COIFFARD, M. LAZAR, P. BROSSELARD, D. PLANSON, Study of trenching formation during SF6 /O2 reactive ion etching of 4H-SiC, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 766-769 (2010)