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Study on functionalizing the surface of AlGaN/GaN high electron mobility transistor based sensors

A. OULD-ABBAS1, O. ZEGGAI1, M. BOUCHAOUR1, H. ZEGGAI1, N. SAHOUANE1, M. MADANI1, D. TRARI1, M. BOUKAIS1, N.-E. CHABANE-SARI1

Affiliation

  1. Research unit of Materials and Renewable energies (URMER), University Abou Bakr Belkaïd, B.P. 119, Tlemcen, Algeria

Abstract

A promising sensing technology utilizes AlGaN/GaN high electron mobility transistors(HEMTs). HEMT structures have been developed for use in microwave power amplifiers due to their high two dimensional electron gas (2DEG) mobility and saturation velocity. The conducting 2DEG channel of AlGaN/GaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMT sensors can be used for detecting gases, ions, pH values, proteins, and DNA. In this paper we review recent progress on functionalizing the surface of HEMTs for specific detection of glucose, kidney marker injury molecules, prostate cancer, and other common substances of interest in the biomedical field.

Keywords

HEMT, Semiconductor III-N, AlGaN/GaN heterostructures, DNA, Sensor, 2DEG.

Submitted at: Sept. 28, 2013
Accepted at: Nov. 7, 2013

Citation

A. OULD-ABBAS, O. ZEGGAI, M. BOUCHAOUR, H. ZEGGAI, N. SAHOUANE, M. MADANI, D. TRARI, M. BOUKAIS, N.-E. CHABANE-SARI, Study on functionalizing the surface of AlGaN/GaN high electron mobility transistor based sensors, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1323-1327 (2013)