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Study on the growth and properties of highly conductive and high transmittance AZO films

LEI QINGSONG1,* , XU JINPING1, WEN XIXING1

Affiliation

  1. Department of Electronics Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

Abstract

Al doped ZnO films (AZO) were prepared by mid-frequency magnetron sputtering on glass substrates. The electrical and optical properties of the films were measured. The influence of deposition parameters such as substrate temperature (TS), working pressure (P), and plasma power (PW) on the growth and properties of the films were studied. Results suggest that the deposition parameters have great influence on the growth and properties of the films. Highly conductive and high transmittance of AZO thin films with a minimum resistivity of 2.45×10-4 Ωcm and optical transmission greater than 85% in visible spectrum region were achieved for the film deposited at a substrate temperature of 225 oC and a low plasma power of 160 W..

Keywords

ZnO:Al (AZO) films, Magnetron sputtering technology, Growth, Electrical and optical properties.

Submitted at: April 13, 2012
Accepted at: Oct. 30, 2012

Citation

LEI QINGSONG, XU JINPING, WEN XIXING, Study on the growth and properties of highly conductive and high transmittance AZO films, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 11-12, pp. 941-945 (2012)