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Superluminescent diode using narrow-stripe selective area growth at 1.3-μm wavelength

SHUAI ZHOU1,* , JING ZHANG1, SHANG-JUN LIU1, KUN TIAN1, FU-BIN PANG2

Affiliation

  1. Chongqing Optoelectronics Research Institute, Chongqing 400060, China
  2. Electric Power Research Institute of State Grid Jiangsu Electric Power Co., Ltd., Nanjing 211103, China

Abstract

The performance and reliability of 1.3-μm InGaAsP/InP superluminescent diode with a narrow-stripe selective area growth structure are reported. The one-step forming active material and passive optical waveguide of active region are grown in a metal organic chemical vapor deposition system. A 4.4-mW fundamental-transverse-mode output power is obtained under injected current 200mA and 25°C, and the full-width at half maximum of the spectrum is 45.7nm. From the result of accelerated aging test carried out for 3744 hours at the ambient temperature of 85°C, the extrapolated life is more than 7.3 years at an ambient temperature of 25°C..

Keywords

Superluminescent diode, Narrow-stripe selective area growth, Accelerated aging test, Lifetime.

Submitted at: Oct. 22, 2020
Accepted at: Aug. 16, 2021

Citation

SHUAI ZHOU, JING ZHANG, SHANG-JUN LIU, KUN TIAN, FU-BIN PANG, Superluminescent diode using narrow-stripe selective area growth at 1.3-μm wavelength, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 7-8, pp. 313-318 (2021)