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SHUAI ZHOU1,* , JING ZHANG1, SHANG-JUN LIU1, KUN TIAN1, FU-BIN PANG2
- Chongqing Optoelectronics Research Institute, Chongqing 400060, China
- Electric Power Research Institute of State Grid Jiangsu Electric Power Co., Ltd., Nanjing 211103, China
The performance and reliability of 1.3-μm InGaAsP/InP superluminescent diode with a narrow-stripe selective area growth structure are reported. The one-step forming active material and passive optical waveguide of active region are grown in a metal organic chemical vapor deposition system. A 4.4-mW fundamental-transverse-mode output power is obtained under injected current 200mA and 25°C, and the full-width at half maximum of the spectrum is 45.7nm. From the result of accelerated aging test carried out for 3744 hours at the ambient temperature of 85°C, the extrapolated life is more than 7.3 years at an ambient temperature of 25°C..
Superluminescent diode, Narrow-stripe selective area growth, Accelerated aging test, Lifetime.
Submitted at: Oct. 22, 2020
Accepted at: Aug. 16, 2021
SHUAI ZHOU, JING ZHANG, SHANG-JUN LIU, KUN TIAN, FU-BIN PANG, Superluminescent diode using narrow-stripe selective area growth at 1.3-μm wavelength, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 7-8, pp. 313-318 (2021)
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