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Surface passivation of nitride- and phosphide-based compound semiconductors

FAIZ RAHMAN1,* , RICHARD K. OXLAND1, ALI Z. KHOKHAR1

Affiliation

  1. Department of Electronics and Electrical Engineering, University of Glasgow, Rankine Building Oakfield Avenue, Glasgow G12 8LT, United Kingdom

Abstract

Results of surface passivation treatments on nitride and phosphide compound semiconductors are described. In order to assess why sulphur-based passivation treatments are not equally effective on all semiconductors we carried out sulphur passivation using both liquid phase and gas phase techniques and found that the former is more effective than the latter. An explanation in terms of surface ionicity is provided. The improvement as seen through the DC current gain of heterojunction bipolar transistors is described as is its temporal behaviour. Experiments with nitride semiconductors show that silicon nitride is more effective as a surface passivation than any type of sulphide treatment, for this family of semiconductors. The temporal behaviour of silicon nitride passivation on gallium nitride is described. Finally, the use of silicon nitride conformal films for topography-intensive devices has been demonstrated..

Keywords

: Surface Passivation, Indium Phosphide, Gallium Nitride, Sulphide Solution.

Submitted at: March 18, 2009
Accepted at: Aug. 7, 2009

Citation

FAIZ RAHMAN, RICHARD K. OXLAND, ALI Z. KHOKHAR, Surface passivation of nitride- and phosphide-based compound semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 8, pp. 1117-1121 (2009)