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Surface roughness of low-temperature polycrystalline silicon prepared by excimer laser crystallization

CHIL-CHYUAN KUO1,*

Affiliation

  1. Department of Mechanical Engineering, Ming Chi University of Technology No. 84, Gungjuan Road, Taishan Taipei Hsien 243, Taiwan

Abstract

Surface roughness of polycrystalline silicon (poly-Si) films fabricated by both frontside excimer laser crystallization (ELC) and backside ELC are investigated by atomic force microscope. The results show that surface roughness of poly-Si films achieved by backside ELC is lower than that by frontside ELC in three distinct regrowth regimes. The root mean square surface roughness of poly-Si films for frontside ELC and backside ELC in the super lateral growth regime is 21.192 nm and 16.263 nm, respectively. Backside ELC seems to be a good candidate for batch production of low-temperature polycrystalline silicon thin-film transistors under the conditions including same maximum grain size of poly-Si films for both frontside ELC and backside ELC, higher laser efficiency, and lower surface roughness of poly-Si films..

Keywords

Surface roughness, Low-temperature polycrystalline silicon Excimer laser crystallization.

Submitted at: June 18, 2009
Accepted at: July 23, 2009

Citation

CHIL-CHYUAN KUO, Surface roughness of low-temperature polycrystalline silicon prepared by excimer laser crystallization, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 7, pp. 988-993 (2009)