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Synthesis and analysis of low-k material for intermetal dielectric applications in VLSI

BHAVANA N. JOSHI1,* , A. M. MAHAJAN1

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon-425001, INDIA

Abstract

The SiO2 xerogel thin films have been deposited using the TEOS:Ethanol:Water:HCl with molar ratio of 1:2:3.8:0.005. This optimized molar ratio has been used to analyze the effect of aging time on properties of deposited thin films. We had achieved much success in reducing the dielectric constant with the incorporation of the porosity in films with corresponding increase in aging time. The FTIR characterization confirms the deposition of SiO2 xerogel, the increase in FWHM and broadness in Si-O-Si peak, ensures the increase in porosity and clearly relates the presence of porosity in film. The image figure of spectrum prominently exhibits peaks of IR. The porous films with better low-k value of 3.63 were deposited at room temperature by optimizing the process parameters such as composition of chemicals, aging time etc. This porous SiO2 thin films when introduced as an inter-metal between interconnect is useful to enhance the execution speed of a VLSI and to reduce the power consumption..

Keywords

SiO2 Xerogel, image of FTIR, Porosity, Intermetal Dielectrics (IMD).

Submitted at: Sept. 29, 2007
Accepted at: Feb. 18, 2008

Citation

BHAVANA N. JOSHI, A. M. MAHAJAN, Synthesis and analysis of low-k material for intermetal dielectric applications in VLSI, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 2, pp. 422-426 (2008)