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Synthesis and characterization of thermally evaporated (Bi,Sb)2S3 thin films

K. KANDASWAMY1, P. CHRISTOPHER SELVIN1,* , B. NALINI2, I. MOHAMED ABDULLA1, K. P. ABHILASH1

Affiliation

  1. Department of Physics, NGM College, Pollachi-642001, Tamil Nadu, India
  2. Department of Physics, Avinashilingam University, Coimbatore -641043, India

Abstract

Thin films of(Bi,Sb)2S3 were deposited on a glass substrate by vacuum thermal evaporation method and annealed at different temperatures. The elemental compositions of the as-deposited and annealed films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films posses polycrystalline structure with orthorhombic phase and the crystallite size of the films vary from 28 to 63 nm. The observed band-gap energies of the films varying from 2.05 eV to 2.11 eV and its temperature dependence were estimated from optical absorption measurements. Dielectric study shows a decrease in dielectric loss with increase in temperature. The dielectric properties of the films were studied using two probe techniques. The electrical resistivity reveals the semiconducting nature of the film..

Keywords

Bismuth antimony trisulfide nano films, EDAX, XRD, Optical absorption, Bandgap, Semiconductor.

Submitted at: July 28, 2014
Accepted at: Jan. 21, 2015

Citation

K. KANDASWAMY, P. CHRISTOPHER SELVIN, B. NALINI, I. MOHAMED ABDULLA, K. P. ABHILASH, Synthesis and characterization of thermally evaporated (Bi,Sb)2S3 thin films, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 1-2, pp. 145-150 (2015)