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Synthesis and light emission of fine and straight Si nanowires

JINXIAO WANG1, HENGQING YAN1, YANLI QIN1, PINGQI GAO1, JUNSHUAI LI1, MIN YIN1, SHANGLONG PENG1, DEYAN HE1,*

Affiliation

  1. Department of Physics, Lanzhou University, Lanzhou 730000, China

Abstract

Using Au as catalyst, fine and straight Si nanowires (SiNWs) with diameters of 8–30 nm and lengths of several micrometers were synthesized by the self-designed chemical vapor deposition system at 480 °C. The influence of the growth pressures on the nanowire growth and morphology has been investigated by scanning electron microscopy (SEM). High-resolution transmission electron microscope (HRTEM) images indicate the growth direction of the nanowires are along the [1 1 1] with thin amorphous silicon oxide sheaths (~3 nm). The SiNWs with the Raman peak positions at 517 cm-1 exhibit a photoluminescence (PL) peak centered at 750 nm..

Keywords

Si nanowires; VLS; Chemical vapor deposition; HRTEM; Light emission.

Submitted at: July 21, 2008
Accepted at: Dec. 10, 2008

Citation

JINXIAO WANG, HENGQING YAN, YANLI QIN, PINGQI GAO, JUNSHUAI LI, MIN YIN, SHANGLONG PENG, DEYAN HE, Synthesis and light emission of fine and straight Si nanowires, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 12, pp. 3450-3453 (2008)