Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
ZENA E. SLAIBY1,* , ASMIET RAMIZY1
- Physics Department, University of Anbar, College of Sciences, Anbar, Iraq
GaN/ZnO nano-heterostructure ZnO and GaN nanofilms were grown on a silicon Si(111) substrate prepared through pulse laser deposition technique for ammonia (NH3) gas sensors. The structures of the GaN and ZnO layers were visualized using a field emission scanning electron microscope. The surface morphology of the thin GaN and ZnO nanofilms were characterized through atomic force microscopy. The films were extremely dense and have a smooth surface morphology. X-ray diffraction patterns showed crystallized hexagonal structures. The elemental compositions of the thin GaN and ZnO films were identified through energy dispersive X-ray analysis. The GaN/ZnO/Si composite exhibited excellent response as an ammonia gas sensor. The gas sensitivity of the gas sensor device for NH3 gas were measured as a function of concentration. Device sensitivity increased from 32.0904% to 50.08441%, and gas concentration increased from 500 ppm to 1500 ppm.
GaN/ZnO, Pulsed laser deposition, NH3 gas sensor.
Submitted at: Jan. 13, 2020
Accepted at: Oct. 22, 2020
ZENA E. SLAIBY, ASMIET RAMIZY, Synthesis of GaN/ZnO heterostructure thin film on silicon substrate by pulsed laser deposition for ammonia detection, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 9-10, pp. 510-517 (2020)
- Download Fulltext
- Downloads: 2 (from 2 distinct Internet Addresses ).