"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

N. KOTEESWARA REDDY1,2, M. DEVIKA1, M. PRASHANTHA2, K. RAMES2, Z.G. IVANOVA3,* , J. ZAVADIL4

Affiliation

  1. Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore-560012, India
  2. Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
  3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
  4. Institute of Photonics and Electronics AS CR, 182 51 Praha 8-Kobylisy, Czech Republic

Abstract

This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-GaS thin films. Nominal compositions of (GeS2)75(Ga2S3)25 doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (corresponding to 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3- doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameters on the erbium concentration and effect of annealing in the temperature range of 100-200 o C have been evaluated and discussed in relation to possible structural changes..

Keywords

Chalcogenide thin films, Optical properties, Photoinduced changes.

Submitted at: Aug. 29, 2012
Accepted at: April 11, 2013

Citation

N. KOTEESWARA REDDY, M. DEVIKA, M. PRASHANTHA, K. RAMES, Z.G. IVANOVA, J. ZAVADIL, Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 3-4, pp. 182-186 (2013)