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Tellurium based phase change materials

A. VELEA1,2,3

Affiliation

  1. National Institute of Materials Physics, 077125-Bucharest-Magurele, Ilfov, Atomistilor str. 105 bis, P. O. Box MG. 7, Romania
  2. “Horia Hulubei” Foundation, Bucharest-Magurele, P. O. Box Mg. 5, Romania
  3. Faculty of Physics, University of Bucharest, 405 Atomistilor str., P.O.B. MG-11, 077125, Magurele-Ilfov, Romania

Abstract

Phase change materials are the most promising materials for innovation in the computer memory industry. Of great importance is the understanding of the processes that take place during the switching from the high resistivity state to the low resistivity state. In this paper we have tried to find out the correlations between the crystallo-chemical parameters and the switching properties of these materials. The crystallo-chemical parameters, average electronegativity, and glass forming ability nk Z have been calculated for a large number of tellurium chalcogenides. The switching parameters have been correlated with the physical properties of these materials: resistivity, activation energy, and average electronegativity. Change of the chemical bonding during switching would be responsible for the outstanding properties of the phase change materials.

Keywords

Phase-change, Average electronegativity, Glass forming ability, Tellurium.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

A. VELEA, Tellurium based phase change materials, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1983-1987 (2009)