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Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect

YANG-HUA CHANG1, YING-YAN JHU2, CHIEN-JANG WU3,*

Affiliation

  1. Department of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
  2. Graduate School of Optoelectronics, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
  3. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

Abstract

The temperature- and bias-dependent properties of the defect mode in a one-dimensional photonic crystal (1D PC) containing a photonic-quantum-well (PQW) defect are theoretically investigated. The temperature dependence is studied by simultaneously incorporating thermal expansion and thermal-optical effects in the constituent layers. As the thickness and index of refraction of each layer are modulated by temperature, a tunable filter working in the visible region is proposed. The shift of transmittance peak per 100 °C is around 2 nm, depending on the value of m, which is the stack number of the PQW and ranges between 1 and 3 in our study. It is found that the third transmittance peak in the case of m = 3 is most sensitive to temperature (2.43 nm per 100 °C), whereas the second transmittance peak of m = 3 is the sharpest. The bias dependence is studied by considering the electro-optic effect of the defected layer. The shifts of transmittance peaks are found to be in the range of 0.129 ~ 0.188 nm per 1 kV of applied voltage. Additionally, the second transmittance peak of m = 3 is most sensitive to voltage, and it is also the sharpest peak..

Keywords

Photonic crystal, Photonic quantum-well, Thermal effect, Electro-optic effect.

Submitted at: Jan. 2, 2012
Accepted at: April 11, 2012

Citation

YANG-HUA CHANG, YING-YAN JHU, CHIEN-JANG WU, Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 3-4, pp. 185-192 (2012)