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Temperature and series resistance effect on the forward bias current-voltage (I-V) characteristics of In/p-InP Schottky barrier diode (SBD)

D. KORUCU1

Affiliation

  1. Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara,Turkey

Abstract

In this study, the forward bias current-voltage (I-V) characteristics of In/p-InP Schottky Barrier diode (SBD) have been examined in the temperature range of 120-320 K with a temperature step of 40 K. Experimental results show that the values of ideality factor (n) and zero-bias barrier height Φbo were found strongly temperature dependent and while the value Φbo increases, the n decreases with increasing temperature. Such behavior of Φbo and n were interpreted on the basis of the existence of Gaussian distribution (GD) of the barrier heights (BHs) around a mean value due to BH inhomogeneities at metal/semiconductor (M/S) interface. The deviation form lineerity Ln I-V plots in the high bias range was also attributed to series resistance (Rs) effect. In addition, the values of series resistance (Rs) and shunt resistance (Rsh) were obtained as a function of temperature and applied bias voltage using Ohm's Law. The values of the Rs and (Rsh) were also found strongly temperature and applied bias voltage dependent such that their values increase with increasing temperature and applied bias voltage. The value of Rs decreases with increasing temperature for each temperature and applied bias voltage. The changing of the Rs becomes independent form temperature at high voltage region. Non linear Ln I-V plots at high bias region was due to Rs effect. While the values of Rs, Rsh and n decrease, Φbo and Io increase with increasing temperature..

Keywords

Schottky diodes, I-V-T characteristic, Gaussian distribution, Series and shunt resistance, Barrier inhomogenity.

Submitted at: Sept. 10, 2010
Accepted at: Nov. 19, 2010

Citation

D. KORUCU, Temperature and series resistance effect on the forward bias current-voltage (I-V) characteristics of In/p-InP Schottky barrier diode (SBD), Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 11, pp. 2194-2198 (2010)