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Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition

M. AHMETOGLU1,* , K. ERTURK1

Affiliation

  1. Uludag University, Department of Physics, 16059 Gorukle, Bursa, Turkey

Abstract

Electroplating technique is especially interesting due to its low cost and high quality of deposits being extensively used in industry. In this work, Cu film is electrodeposited on n-type Si (100) substrate using constant current mode. The electrical properties of Cu/n-Si were investigated at several temperatures. The current-voltage analysis based on the thermionic emission theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperatures..

Keywords

Electrodeposition, Schottky barrier, Temperature dependence.

Submitted at: Sept. 25, 2007
Accepted at: Feb. 18, 2008

Citation

M. AHMETOGLU, K. ERTURK, Temperature dependence of electrical characteristics of Cu/n-Si Shottky barrier diodes formed by electrodeposition, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 2, pp. 298-301 (2008)