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Temperature-dependent current-conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs)

D. KORUCU1, T.S. MAMMADOV2

Affiliation

  1. Department of Material Science and Engineering, Faculty of Engineering, Hakkari University, 38400, Hakkari -Turkey
  2. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey

Abstract

In this study, we have investigated the forward bias current-voltage (I-V) characteristics of Au/n-InP Schottky barrier diodes (SBDs) in the temperature range of 160-400 K. Experimental results show that the values of ideality factor (n), zero-bias barrier height ΦBo(I-V) were found strongly temperature dependent and while the ΦBo(I-V) increases, the n decreases with increasing temperature. Such behavior of ΦBo(I-V) and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GS) of barrier heights (BHs) at Au/n-InP interface. We attempted to draw a ΦBo vs q/2kT plot to obtain evidence of a GS of the BHs , and the values of ⎯ΦBo=0.89eV and σo= 0.137 V for the mean barrier height and standard deviation at zero bias, respectively, have been obtained from this plot. Thus, a modified ln(Io/T2 )-q2 ΦBo 2/2(kT)2 vs q/kT plot gives ΦBo and Richardson constant A* as 0.904 eV and 10.35 A/cm2 K2 , respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 10.35 A/cm2 K2 is very close to the theoretical value of 9.8 A/cm2 K2 for n-InP. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Au/n-InP SBDs can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the BHs.

Keywords

Au/InP contacts; MBE grown epilayer InP; Barrier inhomogeneties; Gaussian distribution, Temperature dependence.

Submitted at: Jan. 23, 2011
Accepted at: Feb. 20, 2012

Citation

D. KORUCU, T.S. MAMMADOV, Temperature-dependent current-conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs), Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 41-48 (2012)