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Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures

AYKUT ILGAZ1, SIBEL GÖKDEN1,* , REMZIYE TÜLEK1, ALI TEKE1, SÜLEYMAN ÖZÇELIK2, EKMEL ÖZBAY3

Affiliation

  1. Department of Physics, Faculty of Science and Letter, Balıkesir University, Çağış Kampüsü, 10145 Balıkesir, Turkey
  2. Department of Physics, Faculty of Science and Letter, Gazi University, Teknikokullar, 06500 Ankara, Turkey
  3. Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research CenterNANOTAM, Bilkent University, 06800 Ankara, Turkey

Abstract

In this work, the hot-electron transport properties of AlInN/AlN/GaN HEMT structures with a high sheet electron density of 4.84×1013 cm−2 grown by MOCVD (Metal Organic Chemical Vapor Deposition) on sapphire substrate were investigated at lattice temperature ranging from 10 K to 300 K. High speed current–voltage measurements and Hall measurements were used to study hot-electron transport. Current-voltage characteristics show that current and drift velocity increase linearly but deviate from the linearity towards high voltages, as would be expected from the increased scattering of hot electrons with LO phonons. However, no saturation of current and drift velocity were observed at the highest voltage reached. Drift velocities were deduced as approximately 6.7×106 and 6.1×106 cm/s at an electric field of around E ~ 23 kV/cm at lattice temperatures TL = 10 K and 300 K, respectively. To obtain the electron temperature as a function of the applied electric field and power loss as a function of the electron temperature, the so-called mobility comparison method with power balance equations were used. The effect of hot-phonon production on the phonon lifetime and effective energy relaxation of hot electrons was investigated as a function of lattice temperature..

Keywords

AlInN/GaN, Hot electron, Phonon lifetime, Energy relaxation.

Submitted at: Nov. 16, 2013
Accepted at: Sept. 11, 2014

Citation

AYKUT ILGAZ, SIBEL GÖKDEN, REMZIYE TÜLEK, ALI TEKE, SÜLEYMAN ÖZÇELIK, EKMEL ÖZBAY, Temperature dependent hot electron transport in slightly lattice mismatched AlInN/AlN/GaN heterostructures, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 9-10, pp. 1008-1014 (2014)