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Temperature dependent photoluminescence of epitaxial ZnO films on Si (111) substrates



  1. Department of Material Engineering, Shanghai University of Engineering Science, 333 Longteng Road, Songjiang, Shanghai 201620, People’s Republic of China
  2. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University,1954 Hua Shan Road, Shanghai 200030, P. R. China
  3. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Ding Xi Road, Shanghai 200050, P. R. China


High quality epitaxial ZnO films were grown on Si (111) substrates with MgO/TiN buffer layers by PLD. XRD and HRTEM confirm the good quality. PL properties were investigated of temperatures from 83 K to 303 K. Combining the excitons as well as relevant phonon replicas with PL spectra, thermal behaviors of excitonic peak energy, line width, and intensity were analyzed. The yielded band gap of ZnO can be well described by Varshni formula. The extracted thermal activation energy of free exciton (XA) is 53.2 meV. The peak width of XA at 83 K is as narrow as 18.7 meV..


ZnO thin films, Epitaxy, Free exciton, Luminescence.

Submitted at: April 21, 2016
Accepted at: June 7, 2017


XIA ZHANG, HONG CHEN, ZHISHUI YU, XIAOMIN LI, Temperature dependent photoluminescence of epitaxial ZnO films on Si (111) substrates, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 5-6, pp. 384-388 (2017)