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Temperature stable 980 nm InGaAs/GaAsP vertical cavity surface emitting lasers for short-reach links

FATEN ADEL ISMAEL CHAQMAQCHEE1,*

Affiliation

  1. Department of Physics, Faculty of Science and Health, Koya University, Koya KOY45, Kurdistan Region, Iraq

Abstract

InGaAs/GaAsP based quantum well vertical cavity surface emitting lasers (VCSELs) operating in 980 nm are of great interest for optical interconnect applications to offer low cost and low power consuming light source. The devices are based on standard top and bottom AlGaAs distributed Bragg reflectors (DBRs) with high reflectivity. Static characteristics and modulation response were studied to observe thermal stability at high temperature short-reach optical links. Experimental results including an optical output power-current-voltage (LIV) and the spectral emission were performed with an oxide aperture diameter of 6 micrometers at temperature between 15 and 85 degrees Celsius. A maximum small-signal modulation bandwidths exceeding 22 gigahertz at an ambient temperature of 25 degrees Celsius has been reported..

Keywords

Vertical cavity surface emitting laser (VCSEL), AlGaAs DBRs, InGaAs/GaAsP QWs, Static characterization, Modulation bandwidth.

Submitted at: May 5, 2021
Accepted at: Aug. 10, 2022

Citation

FATEN ADEL ISMAEL CHAQMAQCHEE, Temperature stable 980 nm InGaAs/GaAsP vertical cavity surface emitting lasers for short-reach links, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 7-8, pp. 312-317 (2022)