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The deep level influence on the admittance of AlN/Si structures with pulsed laser deposited AlN films♣

S. SIMEONOV1,* , A. SZEKERES1, I. MINKOV1, S. GRIGORESCU2, G. SOCOL2, C. RISTOSCU2, I. N. MIHAILESCU2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, , 1784 Sofia, Bulgaria
  2. National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-36, Magurele, RO-77125, Romania

Abstract

The capacitance-voltage characteristics of MIS structures with pulsed laser deposited AlN films have been measured in the 1–20 MHz test voltage frequency range. The results showed an increase of the capacitance in the accumulation regime and the dielectric constant of AlN films, with decreasing test frequency. Such a capacitance increase is larger in AlN/Si MIS structures with higher deep level concentrations in the AlN film..

Keywords

Thin films, Electrical properties, Deep levels, Dielectric constant.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

S. SIMEONOV, A. SZEKERES, I. MINKOV, S. GRIGORESCU, G. SOCOL, C. RISTOSCU, I. N. MIHAILESCU, The deep level influence on the admittance of AlN/Si structures with pulsed laser deposited AlN films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1292-1295 (2009)