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The effect of carrier gas flow rate on the growth and optical properties of MoS2 nanosheets by chemical vapor deposition

ZUSONG ZHU1,* , JIANCUN YOU1

Affiliation

  1. School of Electronic Engineering and Intelligent Manufacturing, Anqing Normal University, Anqing 246133, People’s Republic of China

Abstract

The effect of carrier gas flow rate on the growth and optical properties of molybdenum disulfide (MoS2) layers grown on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD) with MoO3 and S powder as the precursors was investigated. Optical microscopy, Raman and photoluminescence measurements indicate that carrier gas flow rate plays a crucial role in the growth and optoelectrical properties of MoS2 nanosheets. The regular triangular MoS2 monolayer with best crystalline quality and large edge sides is synthesized at the carrier gas flow rate about 75sccm..

Keywords

MoS2, Chemical vapor deposition, Carrier gas flow rate, Crystalline quality.

Submitted at: June 21, 2024
Accepted at: Aug. 5, 2025

Citation

ZUSONG ZHU, JIANCUN YOU, The effect of carrier gas flow rate on the growth and optical properties of MoS2 nanosheets by chemical vapor deposition, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 7-8, pp. 303-309 (2025)