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The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature

H. USLU1,* , Y. ŞAFAK1, İ. TAŞÇIOĞLU1, Ş. ALTINDAL1

Affiliation

  1. Physics Department, Gazi University, 06500 Ankara, Turkey

Abstract

The effect of frequency and illumination intensity on the main electrical parameters such as ideality factor (n), zero bias barrier height (ΦBo), depletion layer width (WD), doping concentration (ND) and interface state densities (Nss) of Al-TiWPd2Si/n-Si structures have been investigated by using current-voltage (I-V) and admittance spectroscopy (C-V and G/w-V) techniques at room temperature. In addition, the dielectric constant (ε′) and dielectric loss (ε″), loss tangent (tanδ) and ac electrical conductivity (σac) have been investigated using C-V and G/w-V measurements at various frequencies and illumination intensities. Experimental results show that both the value of capacitance (C) and conductance (G/w) increase with increasing illumination intensity and decreasing frequency. On the other hand the value of Rs decreases with increasing illumination densities. Also, the ε′, ε″, tanδ and σac values were found strongly frequency, bias voltage and illumination intensity. The results can be concluded to imply that the interfacial polarization can more easily occur at low frequencies and high illumination intensities consequently contributing to the deviation of electrical and dielectric properties of Al-TiW-Pd2Si/n-Si structures..

Keywords

Al-TiW-Pd2Si/n-Si structures, Illumination effect, I-V and C-V measurement, Electrical characteristics, Dielectric properties, AC conductivity.

Submitted at: Jan. 15, 2009
Accepted at: Feb. 18, 2010

Citation

H. USLU, Y. ŞAFAK, İ. TAŞÇIOĞLU, Ş. ALTINDAL, The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 2, pp. 262-266 (2010)