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The effect of nitrogen doping on the structure of Ge1Sb2Te4 film

M. OSIAC1, V. TIRON2, G.-E. IACOBESCU1,*

Affiliation

  1. University of Craiova, Department of Physics, Craiova, 200585, Romania
  2. ”A.I. Cuza” University, Faculty of Physics, Iasi, 700506, Romania

Abstract

In order to increase the Ge1Sb2Te4 sheet resistance, the nitrogen was used as a dopant. The effect of the nitrogen on the Ge1Sb2Te4 structure film was studied using XRD and Raman spectroscopy methods. The nitrogen has a great effect on the resistance annealing behavior of Ge1Sb2Te4 film by suppressing the phase transition from face cubic centered to the hexagonal closed packed structure. For high nitrogen percentage in the film, the transition temperatures were established by sheet resistance measurements as a function of the annealing temperature. The surface topography of films was investigated by AFM..

Keywords

HiPIMS, Chalcogenide, Thin film.

Submitted at: July 14, 2015
Accepted at: Sept. 9, 2015

Citation

M. OSIAC, V. TIRON, G.-E. IACOBESCU, The effect of nitrogen doping on the structure of Ge1Sb2Te4 film, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 9-10, pp. 1471-1475 (2015)