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The effect of optical gap energy on crystallite size in the Al, Co and In Doped ZnO thin films: by correlation

O. BELAHSSEN1, S. BENRAMACHE1,* , H. BEN TEMAM1

Affiliation

  1. Physic Laboratory of Thin Films and Applications (LPCMA), University of Biskra, Biskra 07000, Algeria

Abstract

Development of novel nanomaterials as a semiconductor depends on the size and structure. Undoped and doped ZnO with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 °C. This paper is to present a new approach to the description of estimate of the crystallite size of doped ZnO with Al, Co and In. The correlation between structural and optical properties of doped films suggests that the crystallite size of the films is predominantly estimated by the band gap energy and the concentration of Al, Co and In. The measurement in the crystallite size of doped films with proposed model it is equal to the experimental. The maximum of relative error value was estimated in the indium and cobalt doped ZnO thin films. Thus result indicates that such Co doped ZnO thin films have many fewer defects and less disorder..

Keywords

ZnO; Thin films; Semiconductor doping; crystallite size; optical gap energy; Correlation.

Submitted at: Dec. 24, 2013
Accepted at: March 19, 2015

Citation

O. BELAHSSEN, S. BENRAMACHE, H. BEN TEMAM, The effect of optical gap energy on crystallite size in the Al, Co and In Doped ZnO thin films: by correlation, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 3-4, pp. 494-498 (2015)