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The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode

MURAT SOYLU1, M. CAVAS2, A. A. AL-GHAMDI3, OMAR A. AL-HARTOMY3,4, FARID EL-TANTAWY5, F. YAKUPHANOGLU6

Affiliation

  1. Department of Physics, Faculty of Sciences, Bingöl University, Turkey
  2. Maden Higher Vocational School, FiratUniversity, Elazig, Turkey
  3. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia
  4. Department of Physics, Faculty of Science, Tabuk University, Tabuk 71491, Saudia Arabia
  5. Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
  6. Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey

Abstract

The electrical characteristics and interface state density properties of Au/insulator/n-GaAs (MIS metal–insulator– semiconductor) diodes with insulator layers having different thickness have been analyzed by current–voltage and capacitance–voltage techniques at room temperature. The barrier height and ideality factor values for MIS Schottky diodes were found to be 0.66 eV, 1.67 and 0.86 eV, 3.75, respectively. The diodes show a non-ideal I–V behavior with the ideality factor greater than unity. This behavior is attributed to the interfacial insulator layer and the interface states. The obtained results show that the insulator layer modifies the electrical parameters such as interface state density, series resistance and reduces the reverse bias leakage current by more than two orders of magnitude. In addition, the interface distribution profiles (Dit) were extracted from the I-V measurements by taking into account the bias dependence of the effective barrier height for the Schottky diode. The energy distribution curves of the interface states of each sample were determined. The interface state density Nss of the diodes was changed from 4.7x1012 eV-1 cm-2 in (Ec-0.647) eV to 6.35x1014 eV-1 cm-2 in (Ec-0.619) eV for the initial sample AuD1 MIS diode and from 2.67x1015 eV-1 cm-2 in (Ec-0.850) eV to 1.01x1015 eV-1.cm-2 in (Ec-0.756) eV for AuD2 MIS diode..

Keywords

GaAs, Schottky diode, Insulator layer.

Submitted at: May 2, 2011
Accepted at: Feb. 20, 2012

Citation

MURAT SOYLU, M. CAVAS, A. A. AL-GHAMDI, OMAR A. AL-HARTOMY, FARID EL-TANTAWY, F. YAKUPHANOGLU, The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 61-66 (2012)