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The electrical characteristics of Cu/CuS/p-Si/Al structure

A. ATEŞ1, M. SAĞLAM1, B. GÜZELDİR1, M. A. YILDIRIM2, A. ASTAM1

Affiliation

  1. Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey
  2. Department of Physics, Faculty of Education, University of Erzincan, Erzincan, Turkey

Abstract

Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C-2-V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φb=0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of Rs obtained from dV/d(lnI) – I and H(I) – I plots are near to each others (Rs=340.33  and Rs=346.24 , respectively). In the same way, the barrier height calculated from C-2-V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the Nss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap..

Keywords

Thin Films, Multilayer, Interfaces, Coatings, Electrical properties.

Submitted at: March 6, 2010
Accepted at: July 14, 2010

Citation

A. ATEŞ, M. SAĞLAM, B. GÜZELDİR, M. A. YILDIRIM, A. ASTAM, The electrical characteristics of Cu/CuS/p-Si/Al structure, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1466-1471 (2010)