Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
- National Institute for Research and Development in Electrical Engineering ICPE-CA, 313 Splaiul Unirii, 030138, Bucharest, Romania
Al-doped ZnO (AZO) thin films were obtained by RFmagnetron sputtering deposition on the glass substrate, using a ceramic target (not sintered) ZnO:Al2O3(98:2 wt. %) and RF powers between 100 W and 200 W, with a step of 50 W.The AZOfilms werecharacterized by structural, optical and electrical investigations. The XRDpattern indicates the presence of single phase with hexagonal crystalline structure of ZnO. The AZOthin film obtained by using 200 W deposition power exhibited the best TCOelectrical and optical properties, reaching electrical resistivity of 1.20·10-3Ω·cm, charge mobility of 12.6 cm2/Vs and 85% transparency in visible range..
AZO, Thin films, TCO, Magnetron sputtering.
Submitted at: Feb. 15, 2021
Accepted at: June 11, 2021
E. CHIȚANU, The influence of deposition parameters on structural, optical and electrical properties of AZO thin film, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 5-6, pp. 270-274 (2021)
- Download Fulltext
- Downloads: 35 (from 32 distinct Internet Addresses ).