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The influence of doping by samarium on the structure and surface morphology of the As33.3Se33.3S33.4 , As33.3Se33.3Те33.4 chalcogenide glass semiconductor films

A. I. ISAYEV1, S. I. MEKHTIYEVA1, R. I. ALEKBEROV1

Affiliation

  1. Institute of Physics named after academician G.M. Abdullayev’s of Azerbaijan National Academy of Sciences AZ1143, Baku, G. Javid ave 131, Azerbaijan

Abstract

The surface morphology of As33.3Se33.3S33.4, As33.3Se33.3Те33.4 films have been investigated by AFM method and also influence on them of doping by samarium. It was determined the values of the surface roughness parameters and its change by doping. The results are explained within void-cluster model and intrinsic charged defects based on the structural features of the materials studied and the distribution of atoms in the amorphous matrix..

Keywords

Amorphous semiconductors, Chalcogenide.

Submitted at: Nov. 2, 2015
Accepted at: Feb. 10, 2016

Citation

A. I. ISAYEV, S. I. MEKHTIYEVA, R. I. ALEKBEROV, The influence of doping by samarium on the structure and surface morphology of the As33.3Se33.3S33.4 , As33.3Se33.3Те33.4 chalcogenide glass semiconductor films, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 39-43 (2016)