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The influence of H2/Ar flow ratio on the structure and optoelectronic properties of ZnO:Al films deposited on glass and polymer substrates

WANG XIAO-JING1,2, LI GANG-XIAN1, LEI QING-SONG1,2, YUAN JUN-MING1, ZHOU WEI-LI1,2, YU JUN1,2,*

Affiliation

  1. Department of Electronics Science & Technology,Huazhong University of Science & Technology,Wuhan 430074, China
  2. Hubei PV center of engineering&Technology, Wuhan 430074, China

Abstract

Aluminium doped ZnO (ZnO: Al) films were deposited on glass and polymer substrates by RF magnetron sputtering at various mass flow ratio of H2/Ar. The influence of H2/Ar ratio on structure and properties of films was investigated by X-ray diffractometery (XRD), X-ray Photoelectron Spectrum(XPS),UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that low H2 content in the deposition atmosphere is helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films.H2 has a notable effect on the stoichiometry of ZnO:Al films.The O 1s and Zn 2p peak of the films with H2 dilution shifted towards the small binding energy and larger value respectively.The resistivity of 5.32×10-4Ωcm and the average transmittance of 91.3% in the visible region was obtained for the film prepared in the 5% H2/Ar ambient on glass.

Keywords

ZnO:Al; Electrical properties; Optical properties; H2/Ar ratio.

Submitted at: Feb. 22, 2010
Accepted at: June 16, 2010

Citation

WANG XIAO-JING, LI GANG-XIAN, LEI QING-SONG, YUAN JUN-MING, ZHOU WEI-LI, YU JUN, The influence of H2/Ar flow ratio on the structure and optoelectronic properties of ZnO:Al films deposited on glass and polymer substrates, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 6, pp. 1268-1272 (2010)