"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs

R. M. ŠAŠIĆ1, P. M. LUKIĆ2,* , S. M. OSTOJIĆ1, A. ALKOASH1

Affiliation

  1. University of Belgrade, Faculty of Technology and Metallurgy, Karnegijeva 4, 11120 Belgrade, Serbia
  2. University of Belgrade, Faculty of Mechanical Engineering, Kraljice Marije 16, 11120 Belgrade, Serbia

Abstract

The previously developed model describing quantum correction of carriers’ concentration spatial distribution in ultra small MOS/MOD devices has been applied to Surrounding-Gate Cylindrical MOSFETs. The inevitable role of quantum effects over almost the entire sample has been confirmed and supported by numerical calculations for a specific set of geometrical parameters..

Keywords

Analytical model, Spatial carriers distribution, Surrounding-gate MOSFET, Quantum effects, Transport equation.

Submitted at: March 4, 2010
Accepted at: May 26, 2010

Citation

R. M. ŠAŠIĆ, P. M. LUKIĆ, S. M. OSTOJIĆ, A. ALKOASH, The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1161-1164 (2010)