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The investigation of dark current reduction in MSM photodetector based on porous GaN

F. K. YAM1,* , Z. HASSAN1

Affiliation

  1. School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract

In this article, we investigate the use of porous GaN layer for the reduction of dark current in the metal-semiconductor-metal (MSM) photodetector. For comparative study, a standard MSM photodetector was also prepared based on the as-grown GaN wafer. The initial study revealed that the porous GaN layer was able to reduce the dark current of the MSM photodetector by two orders of magnitude as compared to MSM photodetector fabricated on the as-grown GaN..

Keywords

MSM photodetector, Porous GaN, Dark current.

Submitted at: Dec. 1, 2007
Accepted at: March 17, 2008

Citation

F. K. YAM, Z. HASSAN, The investigation of dark current reduction in MSM photodetector based on porous GaN, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 3, pp. 545-548 (2008)