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The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy

O. BUTE1, GH. V. CIMPOCA1,* , E. PLACIDI2, F. ARCIPRETE2, F. PATELLA2, M. FANFONI2, A. BALZAROTTI2

Affiliation

  1. Physics Department, Science and Arts Faculty, Valahia University of Targoviste, Carol I street no. 2, 130024, Targoviste, Romania
  2. Dipartimento di Fisica, Universitá di Roma “Tor Vergata”, and Istituto Nazionale per la Fisica della Materia, Via della Ricerca Scientifica 1, 00133 Roma, Italy

Abstract

We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed..

Keywords

Nanomaterials, Quantum Dots, Self assembling.

Submitted at: Sept. 25, 2007
Accepted at: Jan. 18, 2008

Citation

O. BUTE, GH. V. CIMPOCA, E. PLACIDI, F. ARCIPRETE, F. PATELLA, M. FANFONI, A. BALZAROTTI, The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 1, pp. 74-79 (2008)