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The studies on the role of fluorine in SnO2:F films prepared by spray pyrolysis with SnCl4

B. ZHANG1,2, Y. TIAN1, J. X. ZHANG1,2, W. CAI2

Affiliation

  1. Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China
  2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001. China

Abstract

The SnO2:F films with varied fluorine concentrations were prepared by spray pyrolysis method. The experimental evidence of fluorine substitution for oxygen is provided by FTIR spectrum. The FTIR and carrier concentration results suggest that the fluorine ions prefer to occupy the oxygen position in SnO2 lattice at the low doping levels, which plays a role of donors. While beyond a certain doping level, the fluorine starts to fill the interstitial site in the lattice, which has a negative effect on carrier concentration that, in turn, affects the infrared reflectivity of SnO2 films. The increased disorder of the SnO2 lattice is also shown by the FTIR as the rise of fluorine concentration. The scattering of free carriers occurring in the films is also discussed in the paper..

Keywords

SnO2 film, FTIR, Defects, Infrared reflectivity, Scattering.

Submitted at: Jan. 10, 2011
Accepted at: Jan. 26, 2011

Citation

B. ZHANG, Y. TIAN, J. X. ZHANG, W. CAI, The studies on the role of fluorine in SnO2:F films prepared by spray pyrolysis with SnCl4, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 1, pp. 89-93 (2011)