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The study of Al0.29Ga0.71N and AlN cap layers grown on GaN/AlN/Si(111) by RF plasma assisted MBE

M. Z. MOHD YUSOFF1,2, A. MAHYUDDIN2, A. BAHARIN2, Z. HASSAN2, H. ABU HASSAN2, M. J. ABDULLAH2

Affiliation

  1. Department of Applied Sciences, Universiti Teknologi MARA (UiTM), 13500 Permatang Pauh, Penang, Malaysia
  2. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract

In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN cap layers grown on GaN/AlN/Si(111) substrate by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction of x=0.29 was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. The allowed Raman optical phonon mode of GaN, E1 (high) located at 570.74 cm-1 is clearly visible. PL spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, indicating that good crystal quality of the samples have been successfully grown on the Si substrate. For IR reflectance analysis, GaN-like and AlN-like E2 (TO) optical modes have been measured at 558 cm-1 and 667 cm-1 respectively for Al0.29Ga0.71N cap layer. Finally, I-V measurement has been conducted to verify the rectifying characteristic of both samples..

Keywords

III-Nitrides, GaN, AlN, MBE, Silicon substrate.

Submitted at: April 4, 2012
Accepted at: Oct. 30, 2012

Citation

M. Z. MOHD YUSOFF, A. MAHYUDDIN, A. BAHARIN, Z. HASSAN, H. ABU HASSAN, M. J. ABDULLAH, The study of Al0.29Ga0.71N and AlN cap layers grown on GaN/AlN/Si(111) by RF plasma assisted MBE, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 11-12, pp. 935-940 (2012)