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The study of the silicon oxide thickness on crystalline Si by X-ray photoelectron spectroscopy and spectroscopic ellipsometry

C. COTIRLAN1, A.C. GALCA1,* , C.S. CIOBANU1, C. LOGOFATU1

Affiliation

  1. National Institute of Materials Physics, RO-077125, Bucharest-Magurele, Romania

Abstract

The to study of the total oxide (SiO2+SiOx) thickness, SiO2 and SiOx (e.g. Si2O, SiO, Si2O3) thicknesses on Si(100) crystalline substrate with take-off angles ranging from 30° to 80° has been carried out by spectrometric method. The ds Xray Photoelectron Spectroscopy (XPS) thicknesses were compared with dEL thicknesses obtained by fitting the Spectroscopic Ellipsometry (SE) spectra. A qualitatively good correlation is revealed. However, from these estimations of film thicknesses it results that ellipsometry analysis cannot be as accurate as in XPS evaluation. This is due to uncertainty of used optical constants as well due to very thin oxide films used in this work..

Keywords

Thin films, X-ray photoelectron spectroscopy, Spectroscopic ellipsometry.

Submitted at: April 30, 2010
Accepted at: May 26, 2010

Citation

C. COTIRLAN, A.C. GALCA, C.S. CIOBANU, C. LOGOFATU, The study of the silicon oxide thickness on crystalline Si by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1092-1097 (2010)