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The transconductance of a nano-clustered subsurface layer in Si+ -implanted PMMA♣

G. B. HADJICHRISTOV1,* , V. K. GUEORGUIEV1, TZ. E. IVANOV1, Y. G. MARINOV1, V. G. IVANOV2, E. FAULQUES3

Affiliation

  1. Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Sofia University, Faculty of Physics, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria
  3. Institut des Matériaux Jean Rouxel, UMR6502 CNRS, Nantes Atlantic Universities, 2 rue de la Houssiniere, 44 322 Nantes, France

Abstract

The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of the Si+ fluence in the range 1015 – 10 17 cm-2 . Depending on the implantation regime, the ion-modified region of the Si + -implanted PMMA exhibits a transconductance and a field effect that can be used for electronic applications..

Keywords

Ion implanted polymers, Organic field-effect devices, Polymethylmethacrylate (PMMA).

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

G. B. HADJICHRISTOV, V. K. GUEORGUIEV, TZ. E. IVANOV, Y. G. MARINOV, V. G. IVANOV, E. FAULQUES, The transconductance of a nano-clustered subsurface layer in Si+ -implanted PMMA♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1206-1209 (2009)