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SYED ZULQARNAIN HAIDER1, SAFDAR IQBAL1, HAFEEZ ANWAR1,* , AHMAD GHADAFI ISMAIL2, JAZIB ALI3
- Department of Physics, University of Agriculture, 38040 Faisalabad, Pakistan
- Institute of Microengineering and Nanoelectronics, National University of Malaysia, Malaysia
- School of Physics and Astronomy, and Collaborative Innovation Center of IFS (CICIFSA), Shanghai Jiao Tong University, 200240 Shanghai, China
A device model is designed for cuprous oxide (Cu2O) and zinc oxide (ZnO) based heterojunction solar cell. In this work, PC1D is used to analyze the recombination and transport mechanism of charge carriers considering the effect of thickness and doping concentration (NA) of Cu2O and ZnO on performance of the device. It is noted that Cu2O has dominant influence on the performance of device as compared to ZnO. Power conversion efficiency (PCE) attains maximum value about 4 % and 3.68 % at thickness of 420 μm and NA of 1 × 1016 cm-3 respectively..
Zinc oxide, Cuprous oxide, Heterojunction solar cell, Doping concentration, PC1D.
Submitted at: Aug. 4, 2020
Accepted at: Nov. 24, 2021
SYED ZULQARNAIN HAIDER, SAFDAR IQBAL, HAFEEZ ANWAR, AHMAD GHADAFI ISMAIL, JAZIB ALI, Theoretical study on performance of heterojunction solar cell using wide bandgap metal oxide semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 11-12, pp. 554-559 (2021)
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