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Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties

COSMAS M. MUIVA1,2, STEPHEN T. SATHIARAJ1,2, JULIUS M. MWABORA3,2

Affiliation

  1. Department of Physics, University of Botswana, P/Bag UB-0022, Gaborone, Botswana
  2. African Materials Science and Engineering Network (AMSEN), a Carnegie IAS-RISE Network
  3. Department of Physics, University of Nairobi, P.O. Box 30197-00100, Nairobi, Kenya

Abstract

Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films..

Keywords

In2Se3, Spray pyrolysis, Chalcopyrite buffers, Opto-electronic properties, Energy gap.

Submitted at: April 18, 2011
Accepted at: Oct. 20, 2011

Citation

COSMAS M. MUIVA, STEPHEN T. SATHIARAJ, JULIUS M. MWABORA, Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 10, pp. 1240-1245 (2011)