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Thermal annealing effect of Au- and Pt-based Schottky contacts on unintentionally and n-type doped AlxGa1−xN

A.SH. HUSSEIN1,* , Z. HASSAN1, H. ABU HASSAN1, OSAMA S. HAMAD2, C. W. CHIN1, M. A. AHMAD1

Affiliation

  1. Nano-Optoelectronics Research And Technology Laboratory, School Of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia
  2. Collaborative Microelectronic Design Excellence Center (CEDEC), School of Electrical and Electronic Engineering Universiti Sains Malaysia, Engineering Campus 14300 Nibong Tebal, Seberang Perai Selatan

Abstract

In this work, the effect of thermal annealing on electrical properties of Au- and Pt based Schottky contacts on unintentionally and n-type doped AlxGa1−xN (x = 0.24, 0.25) on Si(111) substrates grown by plasma-assisted molecular beam epitaxy (MBE) were studied and investigated. The electrical characteristics were found to be changed by the thermal treatment in each sample with different annealing temperatures. The results revealed that the Au and Pt metal Schottky contacts show the rectifying behavior at as-deposited for each sample, while the Au metal contact revealed that the Schottky barrier height at annealed temperature of 300 o C was higher than Schottky barrier height for sample annealed at 600 o C. Pt metal contact shows the high Schottky barrier heights with different annealing temperatures. A high Schottky barrier height of 0.76 eV with Pt contact was attained at 600 o C and 15 minutes of thermal annealing for n-type doped sample. Finally, the n-type doping enhanced the structural properties of AlGaN sample surface and resulted in good improvement of the electrical properties..

Keywords

Schottky contact, Thermal annealing, MBE, Electrical properties.

Submitted at: May 5, 2011
Accepted at: Sept. 15, 2011

Citation

A.SH. HUSSEIN, Z. HASSAN, H. ABU HASSAN, OSAMA S. HAMAD, C. W. CHIN, M. A. AHMAD, Thermal annealing effect of Au- and Pt-based Schottky contacts on unintentionally and n-type doped AlxGa1−xN, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 9, pp. 1149-1152 (2011)