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Thickness effect and double phase transitions in Ge50Te50 thin films prepared by PLD

S. HUSSEIN1, H. GHAMLOUCHE1,*

Affiliation

  1. Department of Physics and Electronics, Faculty of Sciences I, Lebanese University, Hadat, Lebanon

Abstract

The phase change material binary compound Ge50Te50 thin films were prepared by Pulsed Laser Deposition technique (PLD). The effect of deposition time on the physical properties of the films has been investigated. The phase transition, the electrical measurements showed two phase transitions at different temperatures. The first is the standard transition from amorphous to crystalline phase, while the second is the transition in the crystalline state from rhombohedral to cubic phase. XRD and DSC measurements have been performed to confirm the existence of these two peaks..

Keywords

Phase change materials, PLD, Ge50Te50, Double phase transitions.

Submitted at: Oct. 11, 2021
Accepted at: Aug. 10, 2022

Citation

S. HUSSEIN, H. GHAMLOUCHE, Thickness effect and double phase transitions in Ge50Te50 thin films prepared by PLD, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 7-8, pp. 372-379 (2022)