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Three dimensional numerical modeling and simulation of a nano SOI MOSFET photodetector

K. GOWRI1,* , V. PARTHASARATHY2, V. RAJAMANI3,*

Affiliation

  1. Department of Electronics and Communication Engineering, PSNA College of Engineering and Technology, Dindigul, Tamilnadu, India – 62462
  2. Department of Computer Science and Engg.,Veltech Multitech Dr. Rangarajan Dr. Sakunthala Engg. College Avadi, Chennai, Tamilnadu, India – 600062
  3. Department of ECE, Veltech Multitech Dr. Rangarajan Dr. Sakunthala Engg. College Avadi, Chennai, Tamilnadu, India – 600062

Abstract

This paper deals with three dimensional numerical modeling of an optically controlled nano SOI MOSFET photodetector for OEIC photoreceiver design. The exact potential potential profile of the device under illuminated condition has been computed numerically by solving 3D Poisson’s equation using Liebmann’s iteration method.The electric field profile and mobility of the carriers have also been studied extensively under illuminated condition to have an in depth analysis. The drain characteristics and transfer characteristics are also presented in this paper. The results show that the device characteristics are strongly influenced by incident optical radiation. The model enables one to estimate various parameters which determine the potential use of this device for photo detection in OEIC photoreceivers..

Keywords

Numerical 3D modeling, SOI MOSFET, Photodetector, OEIC receivers.

Submitted at: April 8, 2013
Accepted at: March 13, 2014

Citation

K. GOWRI, V. PARTHASARATHY, V. RAJAMANI, Three dimensional numerical modeling and simulation of a nano SOI MOSFET photodetector, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 387-393 (2014)