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Ti doped Ta 2O 5 stacked capacitors♣

E. ATANASSOVA1, D. SPASSOV2,* , A. PASKALEVA2, M. GEORGIEVA2, J. KOPRINAROVA2

Affiliation

  1. Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Ti-doped Ta 2O 5 (10; 30 nm) films obtained by rf sputtering are studied with respect to their dielectric and electrical properties. The incorporation of Ti is performed by an original method, (surface doping where a Ti layer is deposited on the top of Ta 2O 5). It is established that the doping is successful for thin-film stacks, (the current is lowered by ~ 1-1.5 orders of magnitude). In the context of advanced high-k dielectrics, the surface doped Ta 2O 5 has a potential as an active dielectric in storage capacitors of nanoscale dynamic memories. The incorporation of Ti into Ta 2O 5 causes the generation of negative oxide charge, and the mechanism of current reduction is considered to be due to Ti-induced compensation of existing oxygen vacancies..

Keywords

High-k stacks, Ti-doped Ta2O 5, Electrical characteristics.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

E. ATANASSOVA, D. SPASSOV, A. PASKALEVA, M. GEORGIEVA, J. KOPRINAROVA, Ti doped Ta 2O 5 stacked capacitors♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1509-1512 (2009)