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Transformations in phase-change memory material during thermal cycling

A. A. SHERCHENKOV1, S. A. KOZYUKHIN2, E.V. GORSHKOVA1

Affiliation

  1. Institute of Electronic Technology, Moscow, Russian Federation
  2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow, Russian Federation

Abstract

Phase transformations in bulk Ge2Sb2Te5 and its thin films during thermal cycling were studied by differential scanning calorimetry, and thermal properties were determined. Exothermal peaks due to the amorphous-fcc and fcc-hcp phase changes were observed in the thin films in the temperature ranges of 145-190 and 205-230°C, respectively. In addition, reproducible endothermic peak in the range of 390-415°C was revealed in thin films as well as in bulk Ge2Sb2Te5, which may influence the kinetics and endurance of writing and erasing processes in phase-change memory devices. Activation energies of observed heat effects were estimated using Kissinger’s method, and nature of endothermic peak was discussed..

Keywords

Phase-change memory, Chalcogenide alloys, Phase transformations, Differential scanning calorimetry.

Submitted at: Oct. 23, 2008
Accepted at: Jan. 29, 2009

Citation

A. A. SHERCHENKOV, S. A. KOZYUKHIN, E.V. GORSHKOVA, Transformations in phase-change memory material during thermal cycling, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 1, pp. 26-33 (2009)